Institución: Instituto de Energía Solar-UPM-Group of III-V Semiconductors  Contacto correo-e:ignacio.reystolle@upm.es
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SCOPE
The Thesis proposed is focused on developing epitaxy processes to use the III-V-on-Si virtual substrates developed at IES -UPM to manufacture III-V multijunction solar cells on mono-crystalline silicon wafers and thus produce inexpensive high-efficiency solar cells.
REQUIREMENTS

A degree in Physics, Electronic Engineering,Telecommunication Engineering or Materials Science.Candidates should have graduated no earlier than 2011

Good academic record (above 2.2)
Great motivation for scientific work and ability for team work
Basic knowledge on semiconductor physics, device physics, epitaxy or material characterization techniques (PL, XRD, EL, AFM, TEM, ….) is highly desirable
Full proficiency in English and basic knowledge of Spanish (or will to get it!) for foreign students
Starting date in Fall 2013

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Información complementaria de la oferta:
GENERAL CONDITIONS
-Immediate incorporation to research activities in the group -The selected candidate will receive an internal grant and will also apply for public funding (FPU) -Excellent experimental infrastructure and international atmosphere.
-Attendance to scientific conferences worldwide -Research stays in partner labs in Europe, the US or Japan APPLICATIONS Interested candidates should send his/her Resumé and transcripts of all undergraduate and graduate coursework